| 期 |
标题 |
文件 |
| 卷 53, 编号 14 (2019) |
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates |
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Timoshnev S., Mizerov A., Lapushkin M., Kukushkin S., Bouravleuv A.
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| 卷 51, 编号 5 (2017) |
Electronic structure of single-layer superlattices (GeC)1(SiC)1, (SnC)1(SiC)1, and (SnC)1(GeC)1 |
|
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Basalaev Y., Malysheva E.
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| 卷 53, 编号 3 (2019) |
Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells |
|
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Vinichenko A., Safonov D., Kargin N., Vasil’evskii I.
|
| 卷 52, 编号 6 (2018) |
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |
|
|
Evstigneev V., Varavin V., Chilyasov A., Remesnik V., Moiseev A., Stepanov B.
|
| 卷 51, 编号 2 (2017) |
Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction |
|
|
Avakyants L., Aslanyan A., Bokov P., Polozhentsev K., Chervyakov A.
|
| 卷 53, 编号 1 (2019) |
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe |
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Shvets V., Azarov I., Marin D., Yakushev M., Rykhlitsky S.
|
| 卷 53, 编号 3 (2019) |
EMF Induced in a p–n Junction under a Strong Microwave Field and Light |
|
|
Gulyamov G., Erkaboev U., Sharibaev N., Gulyamov A.
|
| 卷 53, 编号 16 (2019) |
Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential |
|
|
Grigorieva N., Sel’kin A.
|
| 卷 53, 编号 10 (2019) |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
|
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Andreev B., Lobanov D., Krasil’nikova L., Bushuykin P., Yablonskiy A., Novikov A., Davydov V., Yunin P., Kalinnikov M., Skorohodov E., Krasil’nik Z.
|
| 卷 52, 编号 1 (2018) |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
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Blokhin S., Bobrov M., Blokhin A., Kuzmenkov A., Vasil’ev A., Zadiranov Y., Evropeytsev E., Sakharov A., Ledentsov N., Karachinsky L., Ospennikov A., Maleev N., Ustinov V.
|
| 卷 53, 编号 8 (2019) |
Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate |
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Aleshin A., Bugaev A., Ruban O., Saraikin V., Tabachkova N., Shchetinin I.
|
| 卷 51, 编号 11 (2017) |
Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator |
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|
Khomitsky D., Lavrukhina E., Chubanov A., Njiya N.
|
| 卷 51, 编号 4 (2017) |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
|
|
Khabibullin R., Shchavruk N., Klochkov A., Glinskiy I., Zenchenko N., Ponomarev D., Maltsev P., Zaycev A., Zubov F., Zhukov A., Cirlin G., Alferov Z.
|
| 卷 50, 编号 10 (2016) |
Energy spectrum of charge carriers in TlIn1–xYbxTe2 solid solutions |
|
|
Aliev F., Agaeva U., Zarbaliev M.
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| 卷 51, 编号 5 (2017) |
Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals |
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Kurochkin N., Katsaba A., Ambrozevich S., Vitukhnovsky A., Vashchenko A., Tananaev P.
|
| 卷 53, 编号 16 (2019) |
Enhanced Photocatalytic Activity of ZnS:Mn2+ Quantum Dots |
|
|
Sergeeva K., Sergeev A., Postnova I., Shchipunov Y., Voznesenskiy S.
|
| 卷 53, 编号 9 (2019) |
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers |
|
|
Prokhorov D., Shengurov V., Denisov S., Filatov D., Zdoroveishev A., Chalkov V., Zaitsev A., Ved’ M., Dorokhin M., Baidakova N.
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| 卷 52, 编号 4 (2018) |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
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|
Danilov L., Mikhailova M., Levin R., Konovalov G., Ivanov E., Andreev I., Pushnyi B., Zegrya G.
|
| 卷 50, 编号 10 (2016) |
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range |
|
|
Kunitsyna E., Grebenshchikova E., Konovalov G., Andreev I., Yakovlev Y.
|
| 卷 51, 编号 1 (2017) |
Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |
|
|
Seredin P., Lenshin A., Arsentiev I., Zhabotinskii A., Nikolaev D., Tarasov I., Shamakhov V., Prutskij T., Leiste H., Rinke M.
|
| 卷 53, 编号 7 (2019) |
Epitaxial Carbyne: Analytical Results |
|
|
Davydov S.
|
| 卷 50, 编号 11 (2016) |
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method |
|
|
Lobanov D., Novikov A., Yunin P., Skorohodov E., Shaleev M., Drozdov M., Khrykin O., Buzanov O., Alenkov V., Folomin P., Gritsenko A.
|
| 卷 50, 编号 9 (2016) |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
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Tsatsulnikov A., Lundin W., Sakharov A., Zavarin E., Usov S., Nikolaev A., Yagovkina M., Ustinov V., Cherkashin N.
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| 卷 50, 编号 3 (2016) |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
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Detochenko A., Denisov S., Drozdov M., Mashin A., Gavva V., Bulanov A., Nezhdanov A., Ezhevskii A., Stepikhova M., Chalkov V., Trushin V., Shengurov D., Shengurov V., Abrosimov N., Riemann H.
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| 卷 51, 编号 8 (2017) |
Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” |
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Surovegina E., Demidov E., Drozdov M., Murel A., Khrykin O., Shashkin V., Lobaev M., Gorbachev A., Viharev A., Bogdanov S., Isaev V., Muchnikov A., Chernov V., Radishchev D., Batler J.
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