| Edição |
Título |
Arquivo |
| Volume 51, Nº 4 (2017) |
On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes |
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Emelianov A., Romashkin A., Tsarik K., Nasibulin A., Nevolin V., Bobrinetskiy I.
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| Volume 52, Nº 9 (2018) |
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures |
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Kolodeznyi E., Kurochkin A., Rochas S., Babichev A., Novikov I., Gladyshev A., Karachinsky L., Savelyev A., Egorov A., Denisov D.
|
| Volume 53, Nº 10 (2019) |
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium |
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Tsyplenkov V., Shastin V.
|
| Volume 52, Nº 12 (2018) |
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation |
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Tsyplenkov V., Shastin V.
|
| Volume 50, Nº 5 (2016) |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
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Virko M., Kogotkov V., Leonidov A., Voronenkov V., Rebane Y., Zubrilov A., Gorbunov R., Latyshev P., Bochkareva N., Lelikov Y., Tarhin D., Smirnov A., Davydov V., Shreter Y.
|
| Volume 51, Nº 1 (2017) |
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire |
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Zubrilov A., Gorbunov R., Latishev F., Bochkareva N., Lelikov Y., Tarkhin D., Smirnov A., Davydov V., Sheremet I., Shreter Y., Voronenkov V., Virko M., Kogotkov V., Leonidov A., Pinchuk A.
|
| Volume 51, Nº 6 (2017) |
On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects |
|
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Mnatsakanov T., Levinshtein M., Shuman V., Seredin B.
|
| Volume 50, Nº 6 (2016) |
On the local injection of emitted electrons into micrograins on the surface of AIII–BV semiconductors |
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Zhukov N., Glukhovskoi E., Khazanov A.
|
| Volume 50, Nº 10 (2016) |
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) |
|
|
Andreev V., Malevskiy D., Pokrovskiy P., Rumyantsev V., Chekalin A.
|
| Volume 53, Nº 3 (2019) |
On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires |
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Koryakin A., Kukushkin S., Sibirev N.
|
| Volume 53, Nº 7 (2019) |
On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure |
|
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Domashevskaya E., Goloshchapov D., Dambos A., Rudnev E., Grechkina M., Ryabtsev S.
|
| Volume 51, Nº 6 (2017) |
On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride |
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Lukyanova L., Bibik A., Aseev V., Usov O., Makarenko I., Petrov V., Nikonorov N.
|
| Volume 53, Nº 1 (2019) |
On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect |
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Goldman E., Nabiev A., Naryshkina V., Chucheva G.
|
| Volume 50, Nº 6 (2016) |
On the ohmicity of Schottky contacts |
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Sachenko A., Belyaev A., Konakova R.
|
| Volume 51, Nº 4 (2017) |
On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–xSbx (0.07 ≤ x ≤ 0.2) |
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Muntyanu F., Gheorghitsa E., Gilewski A., Chistol V., Bejan V., Munteanu V.
|
| Volume 53, Nº 11 (2019) |
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates |
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Seredin P., Fedyukin A., Terekhov V., Barkov K., Arsentyev I., Bondarev A., Fomin E., Pikhtin N.
|
| Volume 51, Nº 5 (2017) |
On the photoconductivity of TlInSe2 |
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Ismailov N., Abilov C., Gasanova M.
|
| Volume 50, Nº 6 (2016) |
On the photon annealing of silicon-implanted gallium-nitride layers |
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Seleznev B., Moskalev G., Fedorov D.
|
| Volume 53, Nº 7 (2019) |
On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide |
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Kazanin M., Kaminski V., Grevtsev M.
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| Volume 53, Nº 2 (2019) |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
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Levin R., Nevedomskyi V., Bazhenov N., Zegrya G., Pushnyi B., Mizerov M.
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| Volume 52, Nº 6 (2018) |
On the Possibility of the Propagation of Solitary Electromagnetic Waves in Bigraphene |
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Kryuchkov S., Ionkina E., Kukhar E.
|
| Volume 53, Nº 6 (2019) |
On the Power Factor of Bismuth-Telluride-Based Alloys near Topological Phase Transitions at High Pressures |
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Korobeinikov I., Morozova N., Lukyanova L., Usov O., Ovsyannikov S.
|
| Volume 50, Nº 1 (2016) |
On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys |
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Danylchuk S., Myronchuk G., Mozolyuk M., Bozhko V.
|
| Volume 50, Nº 9 (2016) |
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions |
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Veselov D., Shashkin I., Bakhvalov K., Lyutetskiy A., Pikhtin N., Rastegaeva M., Slipchenko S., Bechvay E., Strelets V., Shamakhov V., Tarasov I.
|
| Volume 53, Nº 11 (2019) |
On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique |
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Svit K., Zhuravlev K.
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